Search results for "Reactive-ion etching"
showing 8 items of 8 documents
Plasma Etching and Integration with Nanoprocessing
2009
This chapter introduces plasma etching—an extensive and perhaps the most widely used micro- and nanoprocessing method both in industry and in research and development laboratories worldwide. The emphasis is on the practical methods in plasma etching and reactive ion etching when used for submicron and nanoscale device fabrication. The principles of plasma etching and reactive ion etching equipment for sample fabrication will be introduced.
Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages
2008
Forward and reverse leakage currents in GaN/InGaN multi-quantum well light-emitting diodes (LEDs) are caused by reactive-ion etching (RIE) damages during device patterning. A method to recover the damaged surfaces, based on a chemical etch in KOH: ethylene-glycol is described. Leakage currents decrease of more than a factor of 10 and are completely suppressed in most of devices.
Polymer based tuneable photonic crystals
2007
We report on the fabrication and characterization of photonic crystal slab waveguide resonators which contain a nanostructured second-order nonlinear optical polymer. The combination of a photonic crystal resonator realized in a second-order nonlinear optical polymer allowed the detection of electro-optical modulation of light with a sub-1-V sensitivity. Furthermore we report on the synthesis of novel nonlinear optical polymers with large second-order hyperpolarizability and improved glass transition temperature. The polymer slab waveguide is micro patterned by means of electron-beam lithography and reactive ion etching. The photonic crystal slab-based resonator consisted of a square lattic…
Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
2012
The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 °C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF6 and O2 under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film’s removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film remova…
Power ultrasound irradiation during the alkaline etching process of the 2024 aluminium alloy
2015
Abstract Prior to any surface treatment on an aluminum alloy, a surface preparation is necessary. This commonly consists in performing an alkaline etching followed by acid deoxidizing. In this work, the use of power ultrasound irradiation during the etching step on the 2024 aluminum alloy was studied. The etching rate was estimated by weight loss, and the alkaline film formed during the etching step was characterized by glow discharge optical emission spectrometry (GDOES) and scanning electron microscope (SEM). The benefit of power ultrasound during the etching step was confirmed by pitting potential measurement in NaCl solution after a post-treatment (anodizing).
Quantum size effects in solitary wires of bismuth
2007
We have performed four-probe electrical transport measurements on solitary highly crystalline wires of semimetallic bismuth with aspect ratios up to 60 at room and at cryogenic temperatures. By proper choice of the substrate material and the film deposition parameters, lithographic wires with lateral dimensions of down to one single grain, $\sim 250$ nm, were fabricated. The electrical resistance of each wire was measured against its thickness through successive reactive ion etching of the self-same wire. Quantum size effects revealed themselves as regular oscillations in the electrical resistance. Some evidence for the semimetal-to-semiconductor phase transition has been detected. The meas…
Changes in surface stress, morphology and chemical composition of silica and silicon nitride surfaces during the etching by gaseous HF acid
2007
Abstract HF acid attack of SiO2 and Si3N4 substrates is analyzed to improve the sensitivity of a sensor based on microcantilever. Ex situ analysis of the etching using XPS, SIMS and AFM show significant changes in the anisotropy and the rate of the etching of the oxides on SiO2 and Si3N4 surface. Those differences influence the kinetic evolution of the plastic bending deflection of the cantilever coated with SiO2 and Si3N4 layer, respectively. The linear dependence between the HF concentration and the Si3N4 cantilever bending corresponds to a deep attack of the layer whereas the non-linear behavior observed for SiO2 layer can be explained by a combination of deep and lateral etching. The ca…
Porous inorganic–organic hybrid material by oxygen plasma treatment
2011
In this paper, we present the pore formation on inorganic–organic hybrid material, ORMOCER©, by reactive ion etching. ORMOCERs are composed of inorganic backbone where organic side groups are attached by cross-linking. Etching of ORMOCER in oxygen plasma generates porous materials with different pore sizes depending on the etching parameters. In addition to planar films, this pore formation process is applicable to micro and nanostructures. Characteristics of porous materials are evaluated by contact angle measurement, scanning electron microscopy, Fourier transform infrared-attenuated total reflectance spectroscopy, time-of-flight elastic recoil detection analysis and Rutherford backscatte…